IRFP2907PBF Datasheet | International Rectifier

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy‡ Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA .irf. Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD -95050C IRFP2907Pb F HEXFET® Power MOSFET VDSS = 75V RDS(on) = 4.5mΩ S ID = 209A† TO-247AC Max. 209† 148† 840 470 3.1 ± 20 1970 See Fig.12a, 12b, 15, 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Typ. - - - 0.24 - - - Max. 0.32 - - - 40 Units W W/°C V m J A m J V/ns °C Units °C/W 08/08/11...