IRFP2907B Description
Max 75V 2.5mΩ 4.5mΩ 2.0 4.0V 20µA ± 200nA -55°C to 175°C Max. Nominal Back Metal position, Thickness: Nominal Front Metal position, Thickness:.
IRFP2907B Key Features
- Power MOSFET Die in Wafer Form D 100% Tested at Probe
- Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack**