IRFP2907B Datasheet | International Rectifier

Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range 75V RDS(on) = 2.5mΩ (typ.)∗∗∗ 6" Wafer Test Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 110A V DS = VGS, ID = 250µA VDS = 75V, VGS = 0V, TJ = 25°C V GS = ±20V Min Typ. Max 75V - - - - - - - - - 2.5mΩ 4.5mΩ 2.0 - - - 4.0V - - - - - - 20µA - - - - - - ± 200n A -55°C to 175°C Max. Mechanical Data Nominal Back Metal position, Thickness: Nominal Front Metal position, Thickness: Dimensions: Wafer Diameter: Wafer Thickness: Relevant Die Mechanical Drawing Number Minimum Street Width Reject Ink Dot Size Remended Storage Environment: Remended Die Attach Conditions: Reference Packaged Part Cr-Ni V-Ag ( 1k A°-2k A°-5k A° ) 100% Al (0.008 mm) .257" x .360" [ 6.53 mm x 9.14 mm ] 150 mm, with 100 flat 0.254 mm ± 0.025 mm 01-5403 0.107 mm 0.51 mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300 °C IRFP2907 NOT ES : 1. AL L DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ]. 2. CONT ROL L ING DIMENS ION: [INCH]. 3. LET T ER DES IGNAT ION: S = S OURCE G = GAT E S K = S OURCE KELVIN IS = CURRENT S ENS E < 0.635 T OLERANCE = + /- 0.013 < [.0250] T OLERANCE = + /- [.0005] > 0.635 T OLERANCE = + /- 0.025 > [.0250] T OLERANCE = + /- [.0010] < 1.270 T OLERANCE = + /- 0.102 < [.050] T OL ERANCE = + /- [.004] > 1.270 T OLERANCE = + /- 0.203 > [.050] T OL ERANCE = + /- [.008] E = EMITT ER Die Outline 6.53 [.257] 4. DIMENS IONAL T OL ERANCES: B ONDING PADS : SOURCE SOURCE 9.14 [.360] WIDTH & L ENGT H OVERALL DIE: GAT E WIDTH & L ENGT H 0.508 [.020] 0.508 [.020] 5. UNL ES S OT HERWIS E NOT ED AL L DIE ARE GEN III - Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in die sales form. Variations in...