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International Rectifier Electronic Components Datasheet

IRFP32N50K Datasheet

Power MOSFET

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PD - 94099B
SMPS MOSFET IRFP32N50K
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Low RDS(on)
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case†
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient†
www.irf.com
HEXFET® Power MOSFET
VDSS
500V
RDS(on)typ.
0.135
ID
32A
TO-247AC
Max.
32
20
130
460
3.7
± 30
13
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
10lb*in (1.1N*m)
Typ.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
450
32
46
Max.
0.26
–––
40
Units
mJ
A
mJ
Units
°C/W
1
10/19/04


International Rectifier Electronic Components Datasheet

IRFP32N50K Datasheet

Power MOSFET

No Preview Available !

IRFP32N50K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 ––– ––– V VGS = 0V, ID = 250µA
––– 0.54 ––– V/°C Reference to 25°C, ID = 1mA†
––– 0.135 0.16 VGS = 10V, ID = 32A „
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 50 µA VDS = 500V, VGS = 0V
––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
14 ––– ––– S VDS = 50V, ID = 32A
Qg Total Gate Charge
––– ––– 190
ID = 32A
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 59
––– ––– 84
nC VDS = 400V
VGS = 10V „
td(on)
Turn-On Delay Time
––– 28 –––
VDD = 250V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 120 ––– ns ID = 32A
––– 48 –––
RG = 4.3
––– 54 –––
VGS = 10V „
Ciss Input Capacitance
––– 5280 –––
VGS = 0V
Coss Output Capacitance
––– 550 –––
VDS = 25V
Crss Reverse Transfer Capacitance
––– 45 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
––– 5630 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
––– 155 –––
––– 265 –––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V …
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 32
––– ––– 130
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 32A, VGS = 0V „
––– 530 800 ns TJ = 25°C, IF = 32A
––– 9.0 13.5 µC di/dt = 100A/µs „
––– 30 ––– A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.87mH, RG = 25,
IAS = 32A,
ƒ ISD 32A, di/dt 296A/µs, VDD V(BR)DSS,
TJ 150°C
2
„ Pulse width 400µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Rθ is measured at TJ approximately 90°C
www.irf.com


Part Number IRFP32N50K
Description Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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