Datasheet Summary
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
G l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- 95772B
IRFR120ZPbF IRFU120ZPbF
HEXFET® Power MOSFET
VDSS = 100V
RDS(on) = 190mΩ
ID = 8.7A
D-Pak
I-Pak...
