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IRFR6215PBF - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • ckage Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFR6215 Power MOSFET
IRFR012 Transistor
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IRFR024 HEXFET POWER MOSFET

Full PDF Text Transcription

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www.datasheet4u.com PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount (IRFR6215) l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = -150V RDS(on) = 0.295Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
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