IRFR6215PbF
IRFR6215PbF is Power MOSFET manufactured by Infineon.
Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
HEXFET® Power MOSFET
VDSS RDS(on)
-150V 0.295
-13A
D- Pak IRFR6215Pb F
S GD
I- Pak IRFU6215Pb F
G Gate
D Drain
S Source
Base part number IRFU6215Pb F IRFR6215Pb F
Package Type I-Pak
D-Pak
Standard Pack Form Tube Tube Tape and Reel Left
Quantity 75 75
Orderable Part Number
IRFU6215Pb F IRFR6215Pb F IRFR6215TRLPb F
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation
Linear Derating Factor
EAS IAR EAR dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction...
