IRFR6215 Overview
l IRFR/U6215 HEXFET® Power MOSFET D VDSS = -150V RDS(on) = 0.295Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device...
IRFR6215 Key Features
- 175°C Operating Temperature
- Surface Mount (IRFR6215)
- Straight Lead (IRFU6215)
- Advanced Process Technology
- Fast Switching
