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IRFSL4510PbF - Power MOSFET

Download the IRFSL4510PbF datasheet PDF. This datasheet also covers the IRFS4510PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • lowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] EAS (AR) = PD (ave).
  • tav Fig 15. Maximum Avalanche Energy vs. Temperature www. irf. com 5 VGS(th), Gate threshold Voltage (V) IRFS/SL4510PbF 4.5 4.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFS4510PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97771 IRFS4510PbF IRFSL4510PbF HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 11.3mΩ max. 13.
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