Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
- tance Current Transformer
-.
- +
RG.
- dv/dt controlled by RG Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device Under Test
+ VDD
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DataShee
DataSheet4U. com
Driver Gate Drive P. W. Period D=
P. W. Period VGS=10V.
- D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Rippl.