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IRFU5410PBF Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRFU5410PBF datasheet PDF. This datasheet also includes the IRFR5410PBF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRFR5410PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Overview

PD -95314A l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D IRFR5410PbF IRFU5410PbF VDSS = -100V G S RDS(on) = 0.