Datasheet4U Logo Datasheet4U.com

IRFU5410 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤205mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRFU5410

📁 Similar Datasheet

  • IRFU5410 - HEXFET Power MOSFET (International Rectifier)
  • IRFU5410PBF - HEXFET Power MOSFET (International Rectifier)
  • IRFU540Z - HEXFET Power MOSFET (International Rectifier)
  • IRFU540ZPbF - HEXFET Power MOSFET (International Rectifier)
  • IRFU5305 - HEXFET Power MOSFET (International Rectifier)
  • IRFU5305PBF - Power MOSFET (International Rectifier)
  • IRFU5505 - HEXFET Power MOSFET (International Rectifier)
  • IRFU5505PBF - Power MOSFET (International Rectifier)
  • IRFU010 - Transistor (International Rectifier)
  • IRFU012 - Transistor (International Rectifier)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤205mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175°C operating junction temperature ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -13 A IDM Drain Current-Single Pulsed -52 A PD Total Dissipation @TC=25℃ 66 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.
Published: |