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IRFU5410 - HEXFET Power MOSFET

This page provides the datasheet information for the IRFU5410, a member of the IRFR5410 HEXFET Power MOSFET family.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet preview – IRFU5410

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Full PDF Text Transcription

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PD - 9.1533A l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D IRFR/U5410 VDSS = -100V RDS(on) = 0.205W G S ID = -13A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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