IRFU9310PBF Datasheet - International Rectifier

Power MOSFET

IRFU9310PBF General Description

l l IRFR9310PbF IRFU9310PbF D HEXFET® Power MOSFET VDSS = -400V RDS(on) = 7.0Ω S G ID = -1.8A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg.

IRFU9310PBF Datasheet (248.88 KB)

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IRFU9310PBF

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International Rectifier

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248.88 KB

Description:

Power mosfet.
PD - 95064A P-Channel Surface Mount (IRFR9310) l Straight Lead (IRFU9310) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Le.

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IRFU9310PBF Power MOSFET International Rectifier

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IRFU9310PBF General Description

Datasheet Details

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