IRFY130CM Datasheet POWER MOSFET N-CHANNE

Manufacturer: International Rectifier (now Infineon)

IRFY130CM power mosfet n-channe by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRFY130CM
Manufacturer	International Rectifier (now Infineon)
File Size	288.39 KB
Description	POWER MOSFET N-CHANNE
Download	IRFY130CM Download (PDF)

Overview

Provisional Data Sheet No.

PD 9.1286C HEXFET® POWER MOSFET www.DataSheet4U.com IRFY130CM N-CHANNEL 100 Volt, 0.18 Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Key Features

n n n n n Hermetically sealed Electrically isolated Simple drive requirements Ease of paralleling Ceramic eyelets Absolute Maximum Ratings Parameter I D @ VGS=10V, TC = 25°C I D @ VGS=10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY130CM Units A W W/K V mJ A mJ V/ns °C g Continuous Drain Current 14.4 Continuous Drain Current 9.1 Pulsed Drain Current 57.6 Max. Power Dissipation 75 Linear Derating Factor 0.6 Gate-to-SourceVoltage ±20 Single Pulse Avalance Energy 69.

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