IRFY130
IRFY130 is N-CHANNEL POWER MOSFET manufactured by Seme LAB.
FEATURES
0.89 1.14
16.38 16.89
13.39 13.64
1 2 3
12.70 19.05
100V 11A 0.19W
10.41 10.92
2.54 BSC
2.65 2.75
- HERMETICALLY SEALED TO- 220 METAL PACKAGE
- SIMPLE DRIVE REQUIREMENTS
TO- 220M
- Metal Package
Pad 1
- Gate Pad 2
- Drain Pad 3
- Source
- LIGHTWEIGHT
- SCREENING OPTIONS AVAILABLE
- ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD TJ , Tstg Rq JC Rq JA Gate
- Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 11A 7A 44A 45W 0.36W/°C
- 55 to 150°C 2.8°C/W max. 80°C/W max.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk
Prelim.4/98
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
BVDSS STATIC ELECTRICAL RATINGS Drain
- Source Breakdown Voltage
Test Conditions
VGS = 0 ID = 1m A VGS = 10V VGS = 10V VDS = VGS VDS ³ 15V VGS = 0 VGS = 20V VGS =
- 20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 11A VDS = 0.5BVDSS VDD = 50V ID = 11A RG = 7.5W ID = 11A ID = 7A ID = 11A ID = 250m A IDS = 7A VDS = 0.8BVDSS TJ = 125°C ID = 1m A
Min.
Typ.
Max....
