IRFY130CM Datasheet | International Rectifier

feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Product Summary Part Number IRFY130CM BVDSS 100V RDS(on) 0.18Ω ID 14.4A Features n n n n n Hermetically sealed Electrically isolated Simple drive requirements Ease of paralleling Ceramic eyelets Absolute Maximum Ratings Parameter I D @ VGS=10V, TC = 25°C I D @ VGS=10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg Units A W W/K… V m J A m J V/ns °C g Continuous Drain Current 14.4 Continuous Drain Current 9.1 Pulsed Drain Current  57.6 Max. Power Dissipation 75 Linear Derating Factor 0.6 Gate-to-Source Voltage ±20 Single Pulse Avalance Energy ‚ 69 Avalance Current  14.4 Repetitive Avalanche Energy  7.5 Peak Diode Recover y dv/dt - 5.5 Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec) Weight 4.3(typical) - ID current limited by pin diameter IRFY130CM Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) .. Parameter BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min - - - 2.0 3.0 - - - - 12.8 1.0 3.8 - - - - - - Typ Max Units - 0.1 - - - - - - - - - - - - - - - 8.7 8.7 - - 0.18 0.21 4.0 - 25 250 100 -100 28.5 6.3 16.6 30 75 40 45 - - V Test Conditions VGS = 0V, I...