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IRFY130CM - POWER MOSFET N-CHANNE

Key Features

  • n n n n n Hermetically sealed Electrically isolated Simple drive requirements Ease of paralleling Ceramic eyelets Absolute Maximum Ratings Parameter I D @ VGS=10V, TC = 25°C I D @ VGS=10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY130CM Units A W W/K… V mJ A mJ V/ns °C g Continuous Drain Current 14.4 Continuous Drain Current 9.1 Pulsed Drain Current  57.6 Max. Power Dissipation 75 Linear Derating Factor 0.6 Gate-to-SourceVoltage ±20 Single Pulse Avalance Energy ‚ 69.

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Provisional Data Sheet No. PD 9.1286C HEXFET® POWER MOSFET www.DataSheet4U.com IRFY130CM N-CHANNEL 100 Volt, 0.18 Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.