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IRFY140CM Datasheet POWER MOSFET N-CHANNEL

Manufacturer: International Rectifier (now Infineon)

Overview

Provisional Data Sheet No.

PD 9.1287B HEXFET® POWER MOSFET www.DataSheet4U.com IRFY140CM N-CHANNEL 100 Volt, 0.077 Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Key Features

  • n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS=10V, TC = 25°C ID @ VGS=10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ Tstg Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalance Energy ‚ Avalance Current  RepetitiveAvalanche Energy  Peak Diode Recovery dv/dt.