• Part: IRFY140C
  • Description: N-CHANNEL POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Seme LAB
  • Size: 48.29 KB
Download IRFY140C Datasheet PDF
Seme LAB
IRFY140C
IRFY140C is N-CHANNEL POWER MOSFET manufactured by Seme LAB.
FEATURES 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 1 2 3 12.07 (0.500) 19.05 (0.750) 100V 15A 0.092Ω 10.41 (0.410) 10.92 (0.430) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC - HERMETICALLY SEALED TO- 257AA METAL PACKAGE - SIMPLE DRIVE REQUIREMENTS - LIGHTWEIGHT - SCREENING OPTIONS AVAILABLE - ALL LEADS ISOLATED FROM CASE TO- 257AA - Metal Package Pad 1 - Gate Pad 2 - Drain Pad 3 - Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RθJC RθJA Gate - Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 15A 10A 60A 50W 0.48W/°C - 55 to 150°C 2.1°C/W max. 80°C/W max. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 6/97 .. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On- State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain (“Miller”) Charge Turn- On Delay Time Rise Time Turn- Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1m A VGS = 10V VDS = VGS VDS ≥ 15V VGS = 0 VGS = 20V VGS = - 20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 15A VDS = 0.5BVDSS VDD = 50V ID = 15A RG = 9.1Ω ID = 15A ID = 12A ID = 250µA IDS = 12A VDS = 0.8BVDSS TJ = 125°C ID = 1m...