IRFY140CM Datasheet | International Rectifier

feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Product Summary Part Number IRFY140CM BVDSS 100V RDS(on) 0.077Ω ID 16- A Features n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS=10V, TC = 25°C ID @ VGS=10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ Tstg Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalance Energy ‚ Avalance Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt - Operating Junction Storage Temperature Range Lead Temperature Weight - ID current limited by pin diameter 16- 16- 100 100 0.8 ±20 230 16- 10 5.5 -55 to 150 300 (0.063 in (1.6mm) from case for 10 sec) 4.3 (typical) Units A W W/K… V m J A m J V/ns °C °C g IRFY140CM Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) .. Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min. - - 2.0 9.1 - - - - 30 2.4 12 - - - - - - Typ. Max. Units - 0.1 - - - - - - - - - - - - - - 8.7 8.7 - - 0.077 4.0 - 25 250 100 -100 59 12 30.7 21 145 64 105 - - V Test Conditions VGS = 0V, ID = 1.0m...