IRFY430CM Datasheet POWER MOSFET N-CHANNEL

Manufacturer: International Rectifier (now Infineon)

IRFY430CM power mosfet n-channel by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRFY430CM
Manufacturer	International Rectifier (now Infineon)
File Size	242.85 KB
Description	POWER MOSFET N-CHANNEL
Download	IRFY430CM Download (PDF)

Overview

Provisional Data Sheet No.

PD 9.1291B HEXFET® POWER MOSFET www.DataSheet4U.com IRFY430CM N-CHANNEL 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Key Features

n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ V GS=10V, TC = 25°C ID @ VGS=10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ Tstg Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalance Energy Avalance Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt.

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