Datasheet Details
| Part number | IRFZ24N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 251.28 KB |
| Description | Power MOSFET |
| Datasheet |
 IRFZ24N Datasheet
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| Part number | IRFZ24N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 251.28 KB |
| Description | Power MOSFET |
| Datasheet |
IRFZ24N Datasheet
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Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFZ24N | N-channel enhancement mode TrenchMOS transistor | NXP |
 |
IRFZ24N | Power MOSFET | ART CHIP |
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IRFZ24N | N-Channel MOSFET Transistor | Inchange Semiconductor |
 |
IRFZ24NL | Power MOSFET | TRANSYS |
 |
IRFZ24NLPbF | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| IRFZ24NL | Power MOSFET |
| IRFZ24NLPBF | HEXFET Power MOSFET |
| IRFZ24NPBF | Power MOSFET |
| IRFZ24NS | Power MOSFET |
| IRFZ24NSPBF | HEXFET Power MOSFET |
| IRFZ24 | Power MOSFET |
| IRFZ24L | HEXFET Power MOSFET |
| IRFZ24S | HEXFET Power MOSFET |
| IRFZ24V | Power MOSFET |
| IRFZ24VL | HEXFET Power MOSFET |