Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
| Part number | IRFZ34N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 188.21 KB |
| Description | Power MOSFET |
| Datasheet |
 IRFZ34N Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| IRFZ34N | N-Channel MOSFET Transistor | Inchange Semiconductor |
| IRFZ34N | Power MOSFET | ART CHIP |
| IRFZ34NS | N-Channel MOSFET | INCHANGE |
| IRFZ34 | Power MOSFET | Fairchild Semiconductor |
| IRFZ34 | N-Channel Power MOSFET | Samsung Electronics |
| Part Number | Description |
|---|---|
| IRFZ34NL | Power MOSFET |
| IRFZ34NLPBF | Power MOSFET |
| IRFZ34NPBF | HEXFET Power MOSFET |
| IRFZ34NS | Power MOSFET |
| IRFZ34NSPBF | Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
