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IRFZ34N Datasheet PDF

ART CHIP IRFZ34N

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
Part No. IRFZ34N
Datasheet IRFZ34N Download
Manufacturer
ART CHIP
Description Power MOSFET
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IRFZ34N datasheet page 1 preview

DESCRIPTION

Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

ABSOLUTE MAXIMUM RATINGS

ID @ Tc=25 ID @ Tc=100 IDM PD @ Tc=25 Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Cu
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