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IRFZ34N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Fully Avalanche Rated
VDSS=55V RDS(on)=0.040Ω
ID=26A
Description
Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
IRFZ34N Datasheet
