Datasheet4U Logo Datasheet4U.com

IRFZ34N - Power MOSFET

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

📥 Download Datasheet

Datasheet preview – IRFZ34N

📁 Similar Datasheet

  • IRFZ34N - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFZ34N - Power MOSFET (ART CHIP)
  • IRFZ34NS - N-Channel MOSFET (INCHANGE)
  • IRFZ34 - Power MOSFET (Fairchild Semiconductor)
  • IRFZ34 - N-Channel Power MOSFET (Samsung Electronics)
  • IRFZ34 - Power MOSFET (Vishay)
  • IRFZ34A - Power MOSFET (Fairchild Semiconductor)
  • IRFZ34A - Power MOSFET (Samsung Electronics)
  • IRFZ34L - Power MOSFET (Vishay)
  • IRFZ34S - Power MOSFET (Vishay)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 94807 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Lead-Free IRFZ34NPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
Published: |