Datasheet Details
| Part number | IRFZ34NPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 178.90 KB |
| Description | HEXFET Power MOSFET |
| Download | IRFZ34NPBF Download (PDF) |
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| Part number | IRFZ34NPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 178.90 KB |
| Description | HEXFET Power MOSFET |
| Download | IRFZ34NPBF Download (PDF) |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
PD - 94807 IRFZ34NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFZ34N | N-Channel MOSFET Transistor | Inchange Semiconductor |
 |
IRFZ34N | Power MOSFET | ART CHIP |
 |
IRFZ34NS | N-Channel MOSFET | INCHANGE |
 |
IRFZ34 | Power MOSFET | Fairchild Semiconductor |
 |
IRFZ34 | N-Channel Power MOSFET | Samsung Electronics |
| Part Number | Description |
|---|---|
| IRFZ34N | Power MOSFET |
| IRFZ34NL | Power MOSFET |
| IRFZ34NLPBF | Power MOSFET |
| IRFZ34NS | Power MOSFET |
| IRFZ34NSPBF | Power MOSFET |
| IRFZ34 | Power MOSFET |
| IRFZ34E | Power MOSFET |
| IRFZ34EPBF | Power MOSFET |
| IRFZ34L | Power MOSFET |
| IRFZ34PbF | Power MOSFET |