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International Rectifier Electronic Components Datasheet

IRFZ44ZLPbF Datasheet

Power MOSFET

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Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
PD - 95379A
IRFZ44ZPbF
IRFZ44ZSPbF
IRFZ44ZLPbF
HEXFET® Power MOSFET
D VDSS = 55V
G RDS(on) = 13.9m
S ID = 51A
TO-220AB
IRFZ44ZPbF
D2Pak
TO-262
IRFZ44ZSPbF IRFZ44ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
51
36
200
80
0.53
± 20
86
105
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/21/10


International Rectifier Electronic Components Datasheet

IRFZ44ZLPbF Datasheet

Power MOSFET

No Preview Available !

IRFZ44Z/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Parameter
Min.
Drain-to-Source Breakdown Voltage 55
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
2.0
Forward Transconductance
22
Drain-to-Source Leakage Current
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Internal Drain Inductance
–––
Typ.
–––
0.054
11.1
–––
–––
–––
–––
–––
–––
29
7.2
12
14
68
33
41
4.5
Max.
–––
–––
13.9
4.0
–––
20
250
200
-200
43
11
18
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
fV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 31A
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 31A
µA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
nC ID = 31A
fVDS = 44V
VGS = 10V
ns VDD = 28V
ID = 31A
fRG = 15
VGS = 10V
nH Between lead,
D
6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 1420 –––
––– 240 –––
––– 130 –––
––– 830 –––
––– 190 –––
––– 300 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
IS Continuous Source Current
Min. Typ. Max. Units
Conditions
––– ––– 51
MOSFET symbol
D
(Body Diode)
A showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– ––– 200
––– ––– 1.2
integral reverse
G
fp-n junction diode.
S
V TJ = 25°C, IS = 31A, VGS = 0V
trr Reverse Recovery Time
––– 23 35
ns TJ = 25°C, IF = 31A, VDD = 28V
fQrr Reverse Recovery Charge ––– 17 26 nC di/dt = 100A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L =0.18mH,
RG = 25, IAS = 31A, VGS =10V. Part not
recommended for use above this value.
ƒ ISD 31A, di/dt 840A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
‰ Rθ is rated at TJ of approximately 90°C.
2 www.irf.com


Part Number IRFZ44ZLPbF
Description Power MOSFET
Maker International Rectifier
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