IRFZ48R Datasheet - International Rectifier

Power MOSFET

IRFZ48R Features

* Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specification

IRFZ48R General Description

l D VDSS = 60V RDS(on) = 0.018Ω G S ID = 50 *A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HE.

IRFZ48R Datasheet (136.92 KB)

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IRFZ48R

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International Rectifier

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136.92 KB

Description:

Power mosfet.
PD - 93958 IRFZ48R HEXFET® Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l .

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IRFZ48R Power MOSFET International Rectifier

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IRFZ48R Features

IRFZ48R General Description

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