IRG4BC40WL Datasheet | International Rectifier

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V VCE(on) typ. = 2.05V @VGE = 15V, IC = 20A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 k Hz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier rebination make these an excellent option for resonant mode switching as well (up to >>300 k Hz) D2Pak IRG4BC40WS TO-262 IRG4BC40WL Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy - Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 40 20 160 160 ± 20 160 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) Units V m J W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mounted steady-state) Weight Typ. ––– 0.5 ––– 2.0 (0.07) Max. 0.77 ––– 40 ––– Units °C/W g (oz) .irf. 4/19/04 .. IRG4BC40WS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage -...