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IRG4BC40KPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD -95174 IRG4BC40KPbF INSULATED GATE BIPOLAR TRANSISTOR.

IRG4BC40KPBF datasheet preview

Datasheet Details

Part number	IRG4BC40KPBF
Manufacturer	International Rectifier (now Infineon)
File Size	600.00 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC40KPBF_InternationalRectifier.pdf

Key Features

Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V.
Generation 4 IGBT design provides higher efficiency than Generation 3.
Industry standard TO-247AC package.
Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for.

IRG4BC40KPBF Distributor

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4BC40K	HEXFET Power MOSFET
IRG4BC40F	HEXFET Power MOSFET
IRG4BC40FPBF	HEXFET Power MOSFET
IRG4BC40S	HEXFET Power MOSFET
IRG4BC40SPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40U	HEXFET Power MOSFET
IRG4BC40UPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40W	HEXFET Power MOSFET
IRG4BC40WL	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WLPBF	INSULATED GATE BIPOLAR TRANSISTOR