UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-220AB package Lead-Free
C
G E
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified.
Full PDF Text Transcription for IRG4BC40UPBF (Reference)
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IRG4BC40UPBF. For precise diagrams, and layout, please refer to the original PDF.
PD - 95428A INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40UPbF UltraFast Speed IGBT Features UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching,...
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: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C G E n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs VCES = 600V VCE(on) typ. = 1.
More Datasheets from International Rectifier (now Infineon)
IRG4BC40UPBF Datasheet
