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IRG4BC40FPBF Datasheet Hexfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 95447 IRG4BC40FPbF INSULATED GATE BIPOLAR TRANSISTOR.

IRG4BC40FPBF datasheet preview

Datasheet Details

Part number	IRG4BC40FPBF
Manufacturer	International Rectifier (now Infineon)
File Size	263.14 KB
Description	HEXFET Power MOSFET
Datasheet	IRG4BC40FPBF_InternationalRectifier.pdf

Key Features

Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified.

IRG4BC40FPBF Distributor

More Datasheets from International Rectifier (now Infineon)

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IRG4BC40UPBF	INSULATED GATE BIPOLAR TRANSISTOR
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