IRG4BC40F
IRG4BC40F is HEXFET Power MOSFET manufactured by International Rectifier.
- 91454B
INSULATED GATE BIPOLAR TRANSISTOR
Features
- Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Industry standard TO-220AB package
Fast Speed IGBT
VCES = 600V
VCE(on) typ. = 1.50V
@VGE = 15V, IC = 27A n-channel
Benefits
- Generation 4 IGBTs offer highest efficiency available
- IGBTs optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR...
