Download IRG4BC40S Datasheet PDF
International Rectifier
IRG4BC40S
IRG4BC40S is HEXFET Power MOSFET manufactured by International Rectifier.
- 91455B INSULATED GATE BIPOLAR TRANSISTOR Features - Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 - Industry standard TO-220AB package Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.32V @VGE = 15V, IC = 31A n-channel Benefits - Generation 4 IGBTs offer highest efficiency available - IGBTs optimized for specified application conditions - Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR...