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IRG4BC40S

IRG4BC40S is HEXFET Power MOSFET manufactured by International Rectifier.
IRG4BC40S datasheet preview

IRG4BC40S Datasheet

Part number IRG4BC40S
Datasheet IRG4BC40S Datasheet PDF (Download)
File Size 161.22 KB
Manufacturer International Rectifier
Description HEXFET Power MOSFET
IRG4BC40S page 2 IRG4BC40S page 3

IRG4BC40S Overview

PD - 91455B IRG4BC40S INSULATED GATE BIPOLAR TRANSISTOR.

IRG4BC40S Key Features

  • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
  • Industry standard TO-220AB package
  • Generation 4 IGBTs offer highest efficiency available
  • IGBTs optimized for specified application conditions
  • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs

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IRG4BC40S Distributor

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