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IRG4BC40S - HEXFET Power MOSFET

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International Rectifier

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IRG4BC40S HEXFET Power MOSFET by International Rectifier - Datasheet Preview — Datasheet preview – IRG4BC40S

Datasheet Details

Part number	IRG4BC40S
Manufacturer	International Rectifier
File Size	161.22 KB
Description	HEXFET Power MOSFET
Datasheet	IRG4BC40S Datasheet
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Product details

Features

Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.32V @VGE = 15V, IC = 31A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

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Published: May 30, 2007 |