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IRG4BC40S Datasheet Hexfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 91455B IRG4BC40S INSULATED GATE BIPOLAR TRANSISTOR.

IRG4BC40S datasheet preview

Datasheet Details

Part number	IRG4BC40S
Manufacturer	International Rectifier (now Infineon)
File Size	161.22 KB
Description	HEXFET Power MOSFET
Datasheet	IRG4BC40S_InternationalRectifier.pdf

Key Features

Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.32V @VGE = 15V, IC = 31A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

IRG4BC40S Distributor

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4BC40SPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40F	HEXFET Power MOSFET
IRG4BC40FPBF	HEXFET Power MOSFET
IRG4BC40K	HEXFET Power MOSFET
IRG4BC40KPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40U	HEXFET Power MOSFET
IRG4BC40UPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40W	HEXFET Power MOSFET
IRG4BC40WL	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WLPBF	INSULATED GATE BIPOLAR TRANSISTOR