IRG4BC40U Datasheet | International Rectifier

Features - Ultra Fast: optimized for high operating frequencies 8-40 k Hz in hard switching, >200 k Hz in resonant mode - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 - Industry standard TO-220AB package Ultra Fast Speed IGBT VCES = 600V VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits - Generation 4 IGBTs offer highest efficiency available - IGBTs optimized for specified application conditions - Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. TO-220AB Max. 600 40 20 160 160 ±20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1N- m) Units V m J W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --------------------- Typ. -----0.50 -----2 (0.07) Max. 0.77 -----80...