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International Rectifier Electronic Components Datasheet

IRG4BC40WS Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD - 95861
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WS
IRG4BC40WL
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
D2Pak
TO-262
IRG4BC40WS IRG4BC40WL
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mounted steady-state)
Weight
www.irf.com
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
1
4/19/04


International Rectifier Electronic Components Datasheet

IRG4BC40WS Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

www.DataSheet4U.com
IRG4BC40WS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
18
—
—
—
—
Typ. Max. Units
Conditions
——
——
V VGE = 0V, IC = 250µA
V VGE = 0V, IC = 1.0A
0.44 — V/°C VGE = 0V, IC = 1.0mA
2.05 2.5
IC = 20A
VGE = 15V
2.36 — V IC = 40A
See Fig.2, 5
1.90 —
IC = 20A , TJ = 150°C
— 6.0
VCE = VGE, IC = 250µA
13 — mV/°C VCE = VGE, IC = 250µA
28 — S VCE = 100 V, IC =20A
— 250 µA VGE = 0V, VCE = 600V
— 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— 2500
VGE = 0V, VCE = 600V, TJ = 150°C
— ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
98 147
12 18
36 54
27 —
22 —
100 150
74 110
0.11 —
0.23 —
0.34 0.45
25 —
23 —
170 —
124 —
0.85 —
7.5 —
1900 —
140 —
35 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC =20A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 20A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
See Fig. 9,10, 14
TJ = 150°C,
IC = 20A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
See Fig. 10,11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
2 www.irf.com


Part Number IRG4BC40WS
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 10 Pages
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