Datasheet4U Logo Datasheet4U.com

IRG4BC40WS - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG4BC40WS, a member of the IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR family.

Datasheet Summary

Features

  • • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction).

📥 Download Datasheet

Datasheet preview – IRG4BC40WS

Datasheet Details

Part number IRG4BC40WS
Manufacturer International Rectifier
File Size 380.83 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4BC40WS Datasheet
Additional preview pages of the IRG4BC40WS datasheet.

📁 Similar Datasheet

  • IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20K-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20KD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20KD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20MD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20MD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 95861 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40WS IRG4BC40WL C Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V G E VCE(on) typ. = 2.
Published: |