IRG4BC40WS
Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
VCES = 600V
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A n-channel
Benefits
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 k Hz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier rebination make these an excellent option for resonant mode switching as well (up to >>300 k Hz)
D2Pak IRG4BC40WS
TO-262 IRG4BC40WL
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter...
