Datasheet Details
| Part number | IRG4CH40SB |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 45.23 KB |
| Description | IGBT Die |
| Datasheet |
 IRG4CH40SB Datasheet
|
|
|
|
| Part number | IRG4CH40SB |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 45.23 KB |
| Description | IGBT Die |
| Datasheet |
IRG4CH40SB Datasheet
|
|
|
|
Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 4.5V Max.
IC = 10A, TJ = 25°C, VGE = 15V 1200V Min.
TJ = 25°C, ICES = 250µA, VGE = 0V 3.0V Min., 6.0V Max.
www.DataSheet4U.com PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C G E 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES.
| Part Number | Description |
|---|---|
| IRG4CC20FB | IGBT Die |
| IRG4CC50UB | IGBT Die |
| IRG4CC50WB | IGBT Die |
| IRG4CC71KB | IGBT Die |
| IRG41BC10UDPBF | Insulated Gate Bipolar Transistor |
| IRG41BC30UD | Ultra Fast CoPack IGBT |
| IRG4BC10K | Short Circuit Rated UltraFast IGBT |
| IRG4BC10KD | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC10KDPBF | HEXFET Power MOSFET |
| IRG4BC10S | INSULATED GATE BIPOLAR TRANSISTOR |