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IRG4PC40KPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

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IRG4PC40KPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4PC40KPBF
Manufacturer	International Rectifier (now Infineon)
File Size	238.42 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC40KPBF Datasheet

Overview

PD - 95646 IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified.

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