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IRG4PC40SPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

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IRG4PC40SPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4PC40SPBF
Manufacturer	International Rectifier (now Infineon)
File Size	627.75 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC40SPBF Datasheet

Overview

PD -95171 IRG4PC40SPbF INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package.
Lead-Free C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.32V @VGE = 15V, IC = 31A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified applicati.

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