Datasheet Summary
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PD -9.1668A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Surface Mountable UltraFast CoPack IGBT
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UltraFast IGBT optimized for high switching frequencies n-channel IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low gate charge G Low profile low inductance SMD-10 package E(k) Separated control & Power-connections for easy paralleling Inherently coplanar pins and tab Easy solder inspection and cleaning
VCES = 600V VCE(ON)typ = 1.5V
@VGE = 15V, IC = 50A
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Highest power density and efficiency available HEXFRED diodes...