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PD - 96156A
IRG7PH30K10PbF
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package
C
VCES = 1200V IC = 23A, TC = 100°C
G E
tSC ≥ 10µs, TJ(max) =175°C
n-channel
C
VCE(on) typ. = 2.
IRG7PH30K10PBF Datasheet
