IRG7PH30K10PBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG7PH30K10PBF
Manufacturer	International Rectifier ↗
File Size	350.46 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH30K10PBF_InternationalRectifier.pdf

Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C VCES = 1200V IC = 23A, TC = 100°C G E tSC ≥ 10µs, TJ(max) =175°C n-channel C VCE(on) typ. = 2.05V Benefits.
High Efficiency in a Wide Range.

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Published: Apr 25, 2011 |