IRG7PH37K10D-EPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

IRG7PH37K10D-EPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG7PH37K10D-EPBF
Manufacturer	International Rectifier (now Infineon)
File Size	656.05 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRG7PH37K10D-EPBF Download (PDF)

Overview

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ.

= 1.

Key Features

Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH37K10DPBF IRG7PH37K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current.

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