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IRG7PH37K10D-EPBF Datasheet, International Rectifier

IRG7PH37K10D-EPBF transistor equivalent, insulated gate bipolar transistor.

IRG7PH37K10D-EPBF Avg. rating / M : 1.0 rating-11

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IRG7PH37K10D-EPBF Datasheet

Features and benefits

Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH3.

Application


* Industrial Motor Drive
* UPS G Gate G IRG7PH37K10DPbF  TO‐247AC  C Collector C E C E G IRG7PH37K10D‐EPbF.

Image gallery

IRG7PH37K10D-EPBF Page 1 IRG7PH37K10D-EPBF Page 2 IRG7PH37K10D-EPBF Page 3

TAGS

IRG7PH37K10D-EPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

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