IRG7PH37K10DPBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG7PH37K10DPBF, a member of the IRG7PH37K10D-EPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

Part number	IRG7PH37K10DPBF
Manufacturer	International Rectifier
File Size	656.05 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH37K10DPBF Datasheet
Additional preview pages of the IRG7PH37K10DPBF datasheet.

Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH37K10DPBF IRG7PH37K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current.

Other Datasheets by International Rectifier

Published: Mar 31, 2014 |