Datasheet Summary
IRG7PH37K10DPbF IRG7PH37K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 15A
G n-channel
Applications
- Industrial Motor Drive
- UPS G Gate
G IRG7PH37K10DPbF TO‐247AC C Collector
G IRG7PH37K10D‐EPbF TO‐247AD E Emitter
Features
Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH37K10DPBF IRG7PH37K10D-EPBF...