IRG7PH42UPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Low VCE (ON) trench IGBT technology

* Low switching losses

* Maximum junction temperature 175 °C

* Square RBSOA

* 100% of the parts tested for ILM

* Positive VCE (ON) temperature co-efficient

* Tight parameter distribution

* Lead -Fre

IRG7PH42UPBF

International Rectifier

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Insulated gate bipolar transistor.

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