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IRG7PH42UPbF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: INSULATED GATE BIPOLAR TRANSISTOR.

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRG7PH42UPbF datasheet preview

Datasheet Details

Part number	IRG7PH42UPbF
Manufacturer	International Rectifier (now Infineon)
File Size	293.06 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH42UPbF IRG7PH42U-EP Datasheet (PDF)

Key Features

Low VCE (ON) trench IGBT technology.
Low switching losses.
Maximum junction temperature 175 °C.
Square RBSOA.
100% of the parts tested for ILM.
Positive VCE (ON) temperature co-efficient.
Tight parameter distribution.
Lead -Free Benefits.
High efficiency in a wide range of.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG7PH42UPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1MPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1PbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UDPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH44K10D-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH44K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR

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