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IRG7PH42UPbF

Manufacturer: International Rectifier (now Infineon)

IRG7PH42UPbF datasheet by International Rectifier (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRG7PH42UPbF datasheet preview

IRG7PH42UPbF Datasheet Details

Part number IRG7PH42UPbF
Datasheet IRG7PH42UPbF IRG7PH42U-EP Datasheet (PDF)
File Size 293.06 KB
Manufacturer International Rectifier (now Infineon)
Description INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UPbF page 2 IRG7PH42UPbF page 3

IRG7PH42UPbF Overview

INSULATED GATE BIPOLAR TRANSISTOR.

IRG7PH42UPbF Key Features

  • Low VCE (ON) trench IGBT technology
  • Low switching losses
  • Maximum junction temperature 175 °C
  • Square RBSOA
  • 100% of the parts tested for ILM
  • Positive VCE (ON) temperature co-efficient
  • Tight parameter distribution
  • Lead -Free

IRG7PH42UPbF Applications

  • Suitable for a wide range of switching frequencies due to
  • Rugged transient performance for increased reliability
  • Excellent current sharing in parallel operation
International Rectifier (now Infineon) logo - Manufacturer

More Datasheets from International Rectifier (now Infineon)

View all International Rectifier (now Infineon) datasheets

Part Number Description
IRG7PH42UPBF INSULATED GATE BIPOLAR TRANSISTOR
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IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR
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IRG7PH44K10D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
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IRG7PH42UPbF Distributor

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