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IRG7PH42UPbF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG7PH42UPbF, a member of the IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

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IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH42UPbF

Datasheet Details

Part number	IRG7PH42UPbF
Manufacturer	International Rectifier
File Size	293.06 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH42UPbF Datasheet
Additional preview pages of the IRG7PH42UPbF datasheet.

IRG7PH42UPbF Product details

Features

Low VCE (ON) trench IGBT technology.
Low switching losses.
Maximum junction temperature 175 °C.
Square RBSOA.
100% of the parts tested for ILM.
Positive VCE (ON) temperature co-efficient.
Tight parameter distribution.
Lead -Free Benefits.
High efficiency in a wide range of.

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Published: Apr 25, 2011 |