IRG7PH42UD1-EP Overview
PD - 97480 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD1PbF IRG7PH42UD1-EP VCES = 1200V I NOMINAL = 30A.
IRG7PH42UD1-EP Key Features
- Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient ca
- Device optimized for induction heating and soft switching