IRG7PH42UD1-EP - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

Part number	IRG7PH42UD1-EP
Manufacturer	International Rectifier
File Size	453.45 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH42UD1-EP Datasheet
Additional preview pages of the IRG7PH42UD1-EP datasheet.

Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.7V Benefits.
Device optimized for induction heating and soft switching.

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Published: Apr 25, 2011 |