IRG7PH42UD1PbF
Overview
- Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.7V Benefits
- Device optimized for induction heating and soft switching applications
- High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation
- Low EMI C GC E
