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IRG7PH42UD1PbF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97480 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD1PbF IRG7PH42UD1-EP VCES = 1200V I NOMINAL =.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.7V Benefits.
  • Device optimized for induction heating and soft switching.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH44K10D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH44K10DPBF INSULATED GATE BIPOLAR TRANSISTOR

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