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IRG7PH42UDPbF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH42UDPbF IRG7PH42UD-EP C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C Benefits.
  • High efficiency in a wide range of.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRG7PH42UD-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1PbF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH44K10D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH44K10DPBF INSULATED GATE BIPOLAR TRANSISTOR

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