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IRG7PH42UDPbF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG7PH42UDPbF, a member of the IRG7PH42UD-EP INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

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IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH42UDPbF

Datasheet Details

Part number	IRG7PH42UDPbF
Manufacturer	International Rectifier
File Size	466.46 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH42UDPbF Datasheet
Additional preview pages of the IRG7PH42UDPbF datasheet.

IRG7PH42UDPbF Product details

Features

Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH42UDPbF IRG7PH42UD-EP C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C Benefits.
High efficiency in a wide range of.

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Published: Apr 25, 2011 |