IRG7PH42UPBF Description
INSULATED GATE BIPOLAR TRANSISTOR.
IRG7PH42UPBF Key Features
- Low VCE (ON) trench IGBT technology
- Low switching losses
- Maximum junction temperature 175 °C
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (ON) temperature co-efficient
- Tight parameter distribution
- Lead -Free
IRG7PH42UPBF Applications
- Suitable for a wide range of switching frequencies due to
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation