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INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free
Benefits
• High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation
Applications
• U.P.S • Welding • Solar inverter • Induction heating
C
G E
n-channel
PD - 96233B
IRG7PH42UPbF IRG7PH42U-EP
VCES = 1200V IC = 60A, TC = 100°C
TJ(max) =175°C VCE(on) typ. = 1.
IRG7PH42UPBF Datasheet
