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IRG7PH42UD1MPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING.

IRG7PH42UD1MPBF datasheet preview

Datasheet Details

Part number	IRG7PH42UD1MPBF
Manufacturer	International Rectifier (now Infineon)
File Size	286.21 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH42UD1MPBF-InternationalRectifier.pdf

Key Features

Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C VCE(on) typ. = 1.7V @IC= 30A n-channel G Benefits.
Device optimized for induction heatin.

More Datasheets from International Rectifier (now Infineon)

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IRG7PH42UD-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UDPbF	INSULATED GATE BIPOLAR TRANSISTOR
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IRG7PH42U-EP	INSULATED GATE BIPOLAR TRANSISTOR
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