IRG7PH42UD1MPBF
Overview
- Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C VCE(on) typ. = 1.7V @IC= 30A n-channel G Benefits
- Device optimized for induction heating and soft switching applications
- High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation
- Low EMI G Gate Base part number IRG7PH42UD1MPbF Package Type TO-247AD Form Tube Standard Pack Quantity 25 C G E TO-247AD C Collector E Emitter Orderable Part Number IRG7PH42UD1MPbF
